Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process (Adv. Electron. Mater. 10/2021)
نویسندگان
چکیده
Low-Power Wearable Electronics In article number 2100375, Byung Jin Cho and co-workers demonstrated a novel copolymer-based flexible ReRAM device with low switching power forming-free characteristics for low-power wearable electronics. The copolymer is composed of 2-hydroxyethyl methacrylate (HEMA) 1, 3, 5 trivinyltrimethyl-cyclotrisiloxane (V3D3), fabricated via initiated Chemical Vapor Deposition (iCVD), vapor-phase synthesis.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2021
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202170048